THE INFLUENCE OF ADLAYERS ON SCHOTTKY-BARRIER FORMATION - THE ADSORPTION OF H2S AND H2O ON INDIUM-PHOSPHIDE

被引：10

作者：

HUGHES, GJ

HUMPHREYS, TP

MONTGOMERY, V

WILLIAMS, RH

机构：

来源：

VACUUM | 1981年 / 31卷 / 10-1期

关键词：

D O I：

10.1016/0042-207X(81)90059-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：539 / 541

页数：3

共 13 条

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[7] UNIFIED DEFECT MODEL AND BEYOND [J].

SPICER, WE ;

LINDAU, I ;

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SU, CY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1019-1027

[8] ELECTRONIC-STRUCTURE OF A NEUTRAL PHOSPHORUS VACANCY IN GAP AND INP [J].

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[9] CHEMISORPTION OF AL AND GA ON THE GAAS(110) SURFACE [J].

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[10]

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