X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF RADIATION-DAMAGED SI-SIO2 INTERFACES

被引：10

作者：

BERTRAND, PA

FLEISCHAUER, PD

SONG, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 02期

关键词：

D O I：

10.1063/1.332125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1100 / 1103

页数：4

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