EXPLOSIVE CRYSTALLIZATION IN SINGLE-CRYSTAL SILICON AMORPHIZED BY IMPLANTATION

被引：7

作者：

BENSAHEL, D ^{[1
]}

AUVERT, G ^{[1
]}

DUPUY, M ^{[1
]}

机构：

[1] LAB ELECTR & TECHNOL INFORMAT,CRM,F-38041 GRENOBLE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.331716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：395 / 397

页数：3

共 10 条

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[2]

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[3] INFLUENCE OF CW LASER SCAN SPEED IN SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI FILM ON SI3N4-GLASS SUBSTRATE [J].

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[5]

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Gilmer G. H., 1980, LASER ELECTRON BEAM, P227

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[8] CRYSTALLIZATION OF AMORPHOUS SILICON FILMS [J].

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[9]

Lerme M., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P547

[10] AMORPHOUS-CRYSTALLINE BOUNDARY DYNAMICS IN CW LASER CRYSTALLIZATION [J].

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