ON THE PREPARATION AND CHARACTERIZATION OF HIGH-QUALITY GAAS SINGLE QUANTUM-WELLS

被引：3

作者：

HEY, R

HORICKE, M

FREY, A

EGOROV, V

KRISPIN, P

JUNGK, G

机构：

[1] Paul Drude Institut für Festkörperelektronik, D-1086 Berlin

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 10期

关键词：

D O I：

10.1063/1.350588

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A regime for growing high-quality GaAs/AlGaAs single-quantum-well structures by molecular-beam epitaxy with interruption only at the AlGaAs-on-GaAs heterointerface is reported. For 15- and 20-nm-wide wells the luminescence linewidth is found to be 0.44 and 0.29 meV, respectively. The data are among the lowest values reported to date. Photoluminescence line splitting due to the formation of extended growth islands was not observed.

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页码：5263 / 5265

页数：3

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