NARROW PHOTOLUMINESCENCE LINEWIDTH OF QUANTUM-WELLS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：2

作者：

SHIRALAGI, KT

PUECHNER, RA

CHOI, KY

DROOPAD, R

MARACAS, GN

机构：

[1] Department of Electrical and Computer Engineering, Center for Solid State Electronics Research, Arizona State University, Tempe

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 114卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(91)90050-F

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaAs/AlGaAs single quantum wells have been grown by gas source molecular beam epitaxy (GSMBE). Photoluminescence (PL) linewidth of the electron to heavy hole excitonic transition is optimized as a function of substrate growth temperature. Transitions corresponding to monolayer changes in well width and impurity bound excitons are examined by deliberately growing quantum wells with additional monolayer-off wells, and by modulation doping the barriers. Growth interruption at the inverted interface was found to enhance impurity bound transitions. The narrowest 2 K photoluminescence linewidths are reported for wells in the range of 50-100 angstrom grown by GSMBE. The differences in the growth kinetics due to the presence of As2 and H-2 leading to improved PL linewidth are reported.

引用

页码：337 / 345

页数：9

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