VERY NARROW INTERFACE MULTILAYER-III-V HETEROSTRUCTURES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：4

作者：

FRIJLINK, PM

ANDRE, JP

GENTNER, JL

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 70卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(84)90299-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：435 / 443

页数：9

共 31 条

[1]

Abramowitz M., 1970, HDB MATH FUNCTIONS

[2] GROWTH OF (AL,GA)AS/GAAS HETEROSTRUCTURES FOR HEMT DEVICES [J].

ANDRE, JP ;

BRIERE, A ;

ROCCHI, M ;

RIET, M .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :445-449

[3] HYDROGENIC IMPURITY STATES IN A QUANTUM WELL - A SIMPLE-MODEL [J].

BASTARD, G .

PHYSICAL REVIEW B, 1981, 24 (08) :4714-4722

[4]

BASTARD G, UNPUB PHYS REV COMMU

[5]

BASTARD G, COMMUNICATION

[6] STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES [J].

CAMRAS, MD ;

BROWN, JM ;

HOLONYAK, N ;

NIXON, MA ;

KALISKI, RW ;

LUDOWISE, MJ ;

DIETZE, WT ;

LEWIS, CR .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6183-6189

[7] NEW ULTRA-LOW-NOISE AVALANCHE PHOTO-DIODE WITH SEPARATED ELECTRON AND HOLE AVALANCHE REGIONS [J].

CAPASSO, F .

ELECTRONICS LETTERS, 1982, 18 (01) :12-13

[8]

COLEMAN JJ, 1981, ELECTRON LETT, V17, P607

[9] QUANTUM WELL STRUCTURES OF IN0.53GA0.47AS/INP GROWN BY HYDRIDE VAPOR-PHASE EPITAXY IN A MULTIPLE CHAMBER REACTOR [J].

DIGIUSEPPE, MA ;

TEMKIN, H ;

PETICOLAS, L ;

BONNER, WA .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :906-908

[10] ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD ;

HOLONYAK, N ;

REZEK, EA ;

CHIN, R .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :295-297

← 1 2 3 4 →