A CLOSED-FORM INVERSION-TYPE POLYSILICON THIN-FILM-TRANSISTOR DC/AC MODEL CONSIDERING THE KINK EFFECT

被引:26
作者
CHEN, SS [1 ]
SHONE, FC [1 ]
KUO, JB [1 ]
机构
[1] NATL TAIWAN UNIV,DEPT ELECTR ENGN,TAIPEI 10617,TAIWAN
关键词
D O I
10.1063/1.358874
中图分类号
O59 [应用物理学];
学科分类号
摘要
This paper reports a closed-form inversion-type polysilicon thin-film transistor dc/ac model considering kink effect for circuit simulation. Using a quasi-two-dimensional approach and an impact ionization model, the kink effect has been explained in terms of dc/ac models as verified by the experimental data. Based on the analytical model, a smaller grain leads to a higher avalanche multiplication factor as a result of a larger average trapped charge density. © 1995 American Institute of Physics.
引用
收藏
页码:1776 / 1784
页数:9
相关论文
共 13 条