AN IMPROVED ANALYTICAL SHORT-CHANNEL MOSFET MODEL VALID IN ALL REGIONS OF OPERATION FOR ANALOG DIGITAL CIRCUIT SIMULATION

被引：10

作者：

CHOW, HC

FENG, WS

KUO, JB

机构：

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1992年 / 11卷 / 12期

关键词：

D O I：

10.1109/43.180265

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

An improved analytical model for short-channel MOSFET's, which is valid in all regions of operation with both the continuous drain current and the output conductance by introducing a source-drain series resistance dependent scaling factor, is proposed for analog/digital circuit simulation. This model considers all second-order effects for an accurate determination of the pinchoff point location without internal numerical iterations. Comparisons with experimental data for submicron devices confirm the model validity. Furthermore, a simple interpolation is also presented to maintain the continuous slope of the output conductance, and its effect on the drain current is demonstrated to be acceptable.

引用

页码：1522 / 1528

页数：7

共 18 条

[1] MODELING OF THE MOSFET INVERSION CHARGE AND DRAIN CURRENT IN MODERATE INVERSION [J].