A SIMPLE-MODEL FOR THE MOS-TRANSISTOR IN SATURATION

被引：13

作者：

ELNOKALI, M

MIRANDA, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 06期

关键词：

D O I：

10.1016/0038-1101(86)90139-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：591 / 596

页数：6

共 9 条

[1] DRIFT VELOCITY SATURATION IN MOS TRANSISTORS [J].

BAUM, G ;

BENEKING, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (06) :481-+

[2]

CANALI C, 1975, IEEE T ELECTRON DEV, V22

[3] A PARAMETRIC SHORT-CHANNEL MOS-TRANSISTOR MODEL FOR SUBTHRESHOLD AND STRONG INVERSION CURRENT [J].

GROTJOHN, T ;

HOEFFLINGER, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (02) :234-246

[4] POTENTIAL OF MOS TECHNOLOGIES FOR ANALOG INTEGRATED-CIRCUITS [J].

HODGES, DA ;

GRAY, PR ;

BRODERSEN, RW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (03) :285-299

[5] SMALL-SIGNAL MOSFET MODELS FOR ANALOG CIRCUIT-DESIGN [J].

LIU, S ;

NAGEL, LW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (06) :983-998

[6] ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN [J].

MERCKEL, G ;

BOREL, J ;

CUPCEA, NZ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) :681-+

[7] SOURCE TO DRAIN RESISTANCE BEYOND PINCH-OFF IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS (MOST) [J].

REDDI, VGK ;

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) :139-+

[8] ACCURATE 2 SECTIONS MODEL FOR MOS-TRANSISTOR IN SATURATION [J].

ROSSEL, P ;

MARTINOT, H ;

VASSILIEFF, G .

SOLID-STATE ELECTRONICS, 1976, 19 (01) :51-56

[9]

YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2

← 1 →