STEP BUNCHING ON (111) FACETS IN THE SELECTIVE GROWTH OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY

被引：5

作者：

NISHIDA, T

SHINOHARA, M

INOUE, N

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN

[2] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.360088

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Step bunching on the {111}A and {111}B side facets formed in the selective growth of GaAs on (001) GaAs substrates by metalorganic vapor phase epitaxy is investigated by atomic force microscopy. It is shown that the bunching characteristics are determined by the misalignment angle of the selective growth mask from [110] and [110] directions of the substrate: Bunched steps are clearly observed when the misalignment angle is more than 0.25 degrees, but their density decreases below this angle, and they completely disappear at 0.008 degrees. Bunching behavior on the {111} facets is compared with that on (001) surfaces and the bunching mechanism is discussed. (C) 1995 American Institute of Physics.

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页码：2854 / 2856

页数：3

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