METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS ON (111)B SUBSTRATES BY USING DIETHYLGALLIUMCHLORIDE

被引：2

作者：

OKAMOTO, K

ITO, O

YAMAGUCHI, K

机构：

[1] Department of Electronic Engineering, The University of Electro-Communications, Chofu-shi, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 7A期

关键词：

MOCVD; GAAS; DIETHYLGALLIUMCHLORIDE; STEP BUNCHING; GIANT STEP;

D O I：

10.1143/JJAP.31.L820

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metalorganic chemical vapor deposition (MOCVD) of GaAs was carried out on (111)B just and 1-degree-misoriented substrates by using diethylgalliumchloride (DEGC). A smooth surface morphology was obtained for (III)B just substrates above the growth temperature of 620-degrees-C, while giant steps were observed for 1-degree-misoriented-(III)B substrates. The occurrence of the step bunching on the misoriented substrates was due to the reevaporation enhancement effects (REE) of GaCl precursors supplied from DEGC.

引用

页码：L820 / L822

页数：3

共 8 条

[1] ANISOTROPIC LATERAL GROWTH IN GAAS MOCVD LAYERS ON (001) SUBSTRATES [J].