TRIPLE AXIS X-RAY-INVESTIGATIONS OF SEMICONDUCTOR SURFACE CORRUGATIONS

X-ray reciprocal space mapping around the symmetrical (004) Bragg reflection and a kinematical x-ray diffraction model were employed in order to determine the geometry and the structural perfection of surface corrugations or quantum wires. This method was used for the analysis of (001) Cd 1-xZnxTe surface corrugations fabricated by holographic lithography and subsequently reactive ion etched with typical periods of 500 nm. Comparison of the measurement and simulation provides conclusive information on etching depth, wire period, wire width, and the inclination of the side walls. Furthermore, the analysis yields a parameter that contains information on side wall roughness, shape fluctuations and, in principle, the crystallographic damage caused by the reactive ion etching process. Due to the high resolution of triple axis diffractometry small strain gradients are observable in the damaged region. © 1994 American Institute of Physics.