INTERSUBBAND TRANSITIONS IN A DELTA-DOPED SEMICONDUCTOR WITH AN APPLIED ELECTRIC-FIELD - EXACT-SOLUTIONS

被引：16

作者：

AHN, D

机构：

[1] GoldStar Central Research Laboratory, Seocho-Gu, Seoul 137-140

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.48.7981

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Intersubband optical absorption in a delta-doped semiconductor with an applied electric field is investigated theoretically with the intrasubband relaxations taken into account. Exact solutions of the Schrodinger equation for the ideal V-shaped potential well with the applied electric field are obtained analytically. It is predicted that wide range tuning of the intersubband absorption would be possible for a delta-doped semiconductor layer by controlling the amount of the planar doping. Calculated intersubband absorption spectra in a delta-doped semiconductor show redshifts with an applied electric field in contrast with intersubband electroabsorption in an ordinary quantum well, which shows blueshifts.

引用

页码：7981 / 7985

页数：5

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