CORRELATION BETWEEN DISLOCATION DISTRIBUTION AND FET PERFORMANCES OBSERVED IN LOW CR DOPED LEC GAAS

被引：29

作者：

NANISHI, Y

ISHIDA, S

MIYAZAWA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1983年 / 22卷 / 01期

关键词：

D O I：

10.1143/JJAP.22.L54

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L54 / L56

页数：3

共 10 条

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[3] ONE-DIMENSIONAL PHOTO-LUMINESCENCE DISTRIBUTION IN SEMI-INSULATING GAAS GROWN BY CZ AND HB METHODS
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[5] LEAKAGE CURRENT IL VARIATION CORRELATED WITH DISLOCATION DENSITY IN UNDOPED, SEMI-INSULATING LEC-GAAS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L542 - L544
[6] MIYAZAWA S, 1983, JPN J APPL PHYS S, V22, P22
[7] MIYAZAWA S, 1982, UNPUB 14TH P C SOL S
[8] INHOMOGENEOUS GAAS-FET THRESHOLD VOLTAGES RELATED TO DISLOCATION DISTRIBUTION
NANISHI, Y
ISHIDA, S
HONDA, T
YAMAZAKI, H
MIYAZAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06): : L335 - L337
[9] NANISHI Y, 1982, 1981 INT S GAAS REL, P7
[10] CHARACTERIZATION OF NONUNIFORMITY IN SEMI-INSULATING LEC GAAS BY PHOTO-LUMINESCENCE SPECTROSCOPY
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