ANALYTICAL MODELING OF DEVICE CIRCUIT INTERACTIONS FOR THE POWER INSULATED GATE BIPOLAR-TRANSISTOR (IGBT)

被引：76

作者：

HEFNER, AR

机构：

[1] Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, Building 229

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 1990年 / 26卷 / 06期

关键词：

D O I：

10.1109/28.62382

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The device-circuit interactions of the power insulated gate bipolar transistor (IGBT) for a series resistor-inductor load, both with and without a snubber, are simulated. An analytical model for the transient operation of the IGBT, previously developed, is used in conjunction with the load circuit state equations for the simulations. The simulated results are compared with experimental results for all conditions. Devices with a variety of base lifetimes are studied. For the fastest devices studied (base lifetime = 0.3 µs), the voltage overshoot of the series resistor-inductor load circuit approaches the device voltage (500 V) for load inductances greater than 1 µH. For slower devices, though, the voltage overshoot is much less, and a larger inductance can therefore be switched without a snubber circuit (e.g., 80 µH for a 7.1-µs device). The simulations are used to determine the conditions for which the different devices can be switched safely without a snubber protection circuit. Simulations are also used to determine the required values and ratings for protection circuit components when protection circuits are necessary. © 1990 IEEE

引用

页码：995 / 1005

页数：11

共 19 条

[1] THE INSULATED GATE TRANSISTOR - A NEW 3-TERMINAL MOS-CONTROLLED BIPOLAR POWER DEVICE [J].

BALIGA, BJ ;

ADLER, MS ;

LOVE, RP ;

GRAY, PV ;

ZOMMER, ND .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :821-828

[2]

BECKE HW, 1986 IEEE APPL POW E, P1

[3]

FERRARO A, 1982 IEEE POW EL SPE, P466

[4]

Forsythe GE., 1977, COMPUTER METHODS MAT

[5]

Hefner AR, 1987, IEEE T POWER ELECTR, V2, P194, DOI [10.1109/TPEL.1987.4766360, 10.1109/TPEL.1987.4766347]

[6] THE EFFECT OF NEUTRONS ON THE CHARACTERISTICS OF THE INSULATED GATE BIPOLAR-TRANSISTOR (IGBT) [J].

HEFNER, AR ;

BLACKBURN, DL ;

GALLOWAY, KF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1428-1434

[7] AN ANALYTICAL MODEL FOR THE STEADY-STATE AND TRANSIENT CHARACTERISTICS OF THE POWER INSULATED-GATE BIPOLAR-TRANSISTOR [J].

HEFNER, AR ;

BLACKBURN, DL .

SOLID-STATE ELECTRONICS, 1988, 31 (10) :1513-1532

[8]

HEFNER AR, 1990 IEEE POW EL SPE, P126

[9]

HEFNER AR, 1989 IEEE POW EL SPE, P303

[10]

HEFNER AR, 1987, THESIS U MARYLAND AN

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