VALENCE-ALTERNATION-PAIR MODEL FOR INTERFACE STATES, FIXED OXIDE CHARGES, RADIATION DEFECTS, AND IMPURITIES OF THE SI-SIO2 INTERFACE

被引：13

作者：

HUBNER, K

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 35期

关键词：

D O I：

10.1088/0022-3719/17/35/021

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：6553 / 6559

页数：7

共 32 条

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[9] DLTS INVESTIGATIONS OF SI-SIO2 INTERFACE STATES OF ELECTRON-BEAM IRRADIATED MOS STRUCTURES [J].

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[10]

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