IMPROVED DELINEATION TECHNIQUE FOR 2-DIMENSIONAL DOPANT PROFILING

被引:12
作者
GONG, L [1 ]
PETERSEN, S [1 ]
FREY, L [1 ]
RYSSEL, H [1 ]
机构
[1] BEREICH BAUELEMENTETECHNOL,FRAUNHOFER INST INTEGRIERTE SCHALTUNGEN,D-91058 ERLANGEN,GERMANY
关键词
D O I
10.1016/0168-583X(94)00472-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A chemical delineation technique suitable for two dimensional dopant profiling has been investigated and improved. The formation of equi-concentration lines in p-doped areas during chemical etching due to drastic changes of the etching rate as function of dopant concentration has been studied. Formation of p-n junction, degeneration of the semiconductor, and formation of recombination centers are discussed as possible cause of these changes. In addition, a new etching procedure for delineation of equi-concentration lines in n-doped regions was successfully tested.
引用
收藏
页码:133 / 138
页数:6
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