INTERFACE-TRAP GENERATION MODELING OF FOWLER-NORDHEIM TUNNEL INJECTION INTO ULTRA-THIN GATE OXIDE

[1] PHOTOEMISSION MEASUREMENTS OF INTERFACE BARRIER ENERGIES FOR TUNNEL OXIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (11) : 933 - 935

[2] FERRY DK, 1978, PHYSICS SIO2 ITS INT, P29

[3] MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN OXIDE LAYER OF MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4886 - +

[4] PHYSICS OF EXCESS ELECTRON VELOCITY IN SUB-MICRONCHANNEL FETS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4791 - 4798

[5] RADIATION-INDUCED PERTURBATIONS OF ELECTRICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) : 195 - &

[6] HOT-ELECTRONS IN SIO2 [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (07) : 449 - 452

[7] COMPARATIVE STUDIES OF TUNNEL INJECTION AND IRRADIATION ON METAL-OXIDE SEMICONDUCTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6946 - 6952

[8] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +

[9] Liang M. S., 1982, International Electron Devices Meeting. Technical Digest, P50

[10] OXIDE THICKNESS DEPENDENCE OF ELECTRON-INDUCED SURFACE STATES IN MOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1975, 27 (11) : 615 - 617

[1] PHOTOEMISSION MEASUREMENTS OF INTERFACE BARRIER ENERGIES FOR TUNNEL OXIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (11) : 933 - 935

[2] FERRY DK, 1978, PHYSICS SIO2 ITS INT, P29

[3] MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN OXIDE LAYER OF MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4886 - +

[4] PHYSICS OF EXCESS ELECTRON VELOCITY IN SUB-MICRONCHANNEL FETS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4791 - 4798

[5] RADIATION-INDUCED PERTURBATIONS OF ELECTRICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) : 195 - &

[6] HOT-ELECTRONS IN SIO2 [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (07) : 449 - 452

[7] COMPARATIVE STUDIES OF TUNNEL INJECTION AND IRRADIATION ON METAL-OXIDE SEMICONDUCTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6946 - 6952

[8] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +

[9] Liang M. S., 1982, International Electron Devices Meeting. Technical Digest, P50

[10] OXIDE THICKNESS DEPENDENCE OF ELECTRON-INDUCED SURFACE STATES IN MOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1975, 27 (11) : 615 - 617