UNIFORMITY OPTICAL-PROPERTIES OF GAINP-GAALINP LAYERS GROWN BY MOVPE

Ga(x)In(1-x)P and (Al(x)Ga(1-x)(y)In(1-y)P layer have been grown by atmospheric pressure metalorganic vapor phase epitaxy (AP-MOVPE) using trimethylgallium (TMGa), trimethylindium (TMI), trimethylaluminium (TMAI) and phosphine (PH3) as source materials. The use of a new geometry reactor with two separate inlets, avoids parasitic gas reactions and improves the quality of the layers. On a 2 inch wafer, photoluminescene mapping proves the good homogeneity of the bandgap all over the wafer. With 690-degrees-C growth temperature, narrow PL peaks (6.5 meV and 15.3 meV of FWHM at 4 K PL for GaInP and GaAlInP with 28% Al, respectively) and high intensity spectra were obtained. All over the surface a very good homogeneity in thickness (+/- 1%) and composition (< 0.2%) was obtained. With this optimization, a laser structure emitting at 650 nm has been grown.