INFLUENCE OF ANNEALING ON THE RESISTANCE OF POLYCRYSTALLINE CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS - A SURFACE CHEMICAL EFFECT

被引：8

作者：

GONON, P

DENEUVILLE, A

GHEERAERT, E

FONTAINE, F

机构：

[1] Laboratoire d'Etudes des Propriétés Electroniques des Solides, Centre National de la Recherche Scientifique, 38042 Grenoble Cedex 9

来源：

关键词：

D O I：

10.1016/0925-9635(94)90243-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The I(V) and I(T) characteristics of diamond films after various treatments are reported and analysed. The ohmic behaviour of contacts on as-grown films originates from a superficial conductive layer making an ohmic contact with diamond. Annealing of the films at 600-degrees-C under argon or vacuum keeps this ohmic behaviour. In contrast, annealing under oxygen, or nitrogen, or air, induces a non-linear, very high contact resistance. In this case the electrical properties are ascribed to a metal-insulator-semiconducting-diamond structure, with a depletion layer and a potential barrier height of 0.85 eV between the diamond band and the Fermi level at the diamond-insulator interface. The superficial insulating layer results from oxidation of the as-grown porous superficial conductive layer, which is in agreement with the oxygen-carbon reactions reported for these experimental conditions.

引用

页码：654 / 657

页数：4

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