ELECTRICAL-CONDUCTION IN UNDOPED DIAMOND FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION

被引:113
作者
MUTO, Y [1 ]
SUGINO, T [1 ]
SHIRAFUJI, J [1 ]
KOBASHI, K [1 ]
机构
[1] KOBE STEEL LTD,ELECTR RES LAB,NISHI KU,KOBE 67302,JAPAN
关键词
D O I
10.1063/1.105254
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electrical conduction along conducting layers between grains in chemical vapor deposited polycrystalline diamond films has been studied. The dc current-voltage characteristic consists of an ohmic region at low voltages and a highly nonlinear region at high voltages. As-grown films are dominated by the ohmic conduction with a small activation energy through disordered graphitic (disordered sp2 bonded carbon) regions between grains. When the as-grown film is annealed at 670 K, the conductivity of the ohmic region becomes governed by levels at 0.93 eV leading to a drastic decrease by several orders of magnitude, and the nonlinear conduction dominates. Hydrogenation of the annealed sample causes an increase in the conductivity around room temperature with little change in the high-temperature conductivity governed by 0.93 eV levels.
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页码:843 / 845
页数:3
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