STRAINED-LAYER INGAAS-GAAS-ALGAAS BURIED-HETEROSTRUCTURE LASERS WITH NONABSORBING MIRRORS BY SELECTIVE-AREA MOCVD

被引：15

作者：

LAMMERT, RM

SMITH, GM

FORBES, DV

OSOWSKI, ML

COLEMAN, JJ

机构：

[1] Microelectronics Laboratory, University of Illinois, Urbana, IL 61801

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 13期

关键词：

SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19950742

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Design, fabrication and operation of strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure (BH) lasers with nonabsorbing mirrors fabricated by selective-area epitaxy (SAE) are presented. The SAE-BH lasers with nonabsorbing mirrors operate at powers up to similar to 325 mW/facet (4 mu m wide output aperture), which is a 40% increase over conventional SAE-BH lasers.

引用

页码：1070 / 1072

页数：3

共 7 条

[1] NONABSORBING-MIRROR (NAM) CDH-LOC DIODE-LASERS [J].