HIGH-POWER 980NM NONABSORBING FACET LASERS

被引：15

作者：

UNGAR, JE

KWONG, NSK

OH, SW

CHEN, JS

BARCHAIM, N

机构：

[1] Ortel Corporation, Alhambra, CA'91803

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 21期

关键词：

SEMICONDUCTOR JUNCTION LASERS; LIFE TESTING;

D O I：

10.1049/el:19941177

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser diodes emitting at 0.98 mu m with epitaxially grown nonabsorbing facets have been fabricated. Catastrophic damage is not observed at thermally limited powers as high as 500 mW. Accelerated lifetesting at 100 mW and 50 degrees C shows the devices to have good reliability characteristics.

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收藏

页码：1766 / 1767

页数：2

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