DARK-LINE-RESISTANT, ALUMINUM-FREE DIODE-LASER AT 0.8-MU-M

被引：52

作者：

YELLEN, SL

SHEPARD, AH

HARDING, CM

BAUMANN, JA

WATERS, RG

GARBUZOV, DZ

PJATAEV, V

KOCHERGIN, V

ZORY, PS

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG K21,RUSSIA

[2] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 12期

关键词：

D O I：

10.1109/68.180565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAsP quantum well, lattice-matched lasers emitting at 0.8 mum are shown to exhibit resistance to [100] dark-line growth. This property in conjunction with the aluminum-free device structure augurs well for future high-power diodes and arrays operating near this wavelength.

引用

页码：1328 / 1330

页数：3

共 13 条

[1]

ALFEROV ZI, 1984, SOV PHYS SEMICOND+, V18, P1035

[2]

Eliseev P.G., 1991, RELIABILITY PROBLEMS

[3] HIGH-POWER 0.8 MICRO-M INGAASP-GAAS SCH SQW LASERS [J].