HYSTERESIS FREE SIO2/INSB METAL-INSULATOR-SEMICONDUCTOR DIODES

被引：25

作者：

OKAMURA, M

MINAKATA, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 06期

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D O I：

10.1063/1.334397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2060 / 2066

页数：7

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