C-V MEASUREMENTS ON MIS STRUCTURES ON N-INSB FORMED BY ROOM-TEMPERATURE REACTIVE DEPOSITION OF SI3N4

被引：6

作者：

OLCAYTUG, F

RIEDLING, K

FALLMANN, W

机构：

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 17期

关键词：

D O I：

10.1049/el:19800480

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：677 / 678

页数：2

相关论文

共 9 条

[1] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[2] JOYCE RJ, 1967, THIN SOLID FILMS, V1, P481
[3] KORWINPAWLOWSKI ML, 1973, THESIS U WATERLOO ON
[4] A LOW-TEMPERATURE PROCESS FOR THE REACTIVE FORMATION OF SI3N4 LAYERS ON INSB
OLCAYTUG, F
RIEDLING, K
FALLMANN, W
[J]. THIN SOLID FILMS, 1980, 67 (02) : 321 - 324
[5] OLCAYTUG F, 1979, THESIS TU WIEN
[6] ALLOYED PLANAR DIODES IN INDIUM-ANTIMONIDE
RIEDLING, K
OLCAYTUG, F
FALLMANN, W
[J]. ELECTRONICS LETTERS, 1979, 15 (18) : 572 - 573
[7] RIEDLING K, 1979, THESIS TU WIEN
[8] ELECTRICAL-PROPERTIES OF SI-N FILMS DEPOSITED ON SILICON FROM REACTIVE PLASMA
SINHA, AK
SMITH, TE
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) : 2756 - 2760
[9] PREPARATION AND PROPERTIES OF THIN FILM SILICON-NITROGEN COMPOUNDS PRODUCED BY A RADIO FREQUENCY GLOW DISCHARGE REACTION
SWANN, RCG
MEHTA, RR
CAUGE, TP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 713 - &