GAIN-BANDWIDTH PRODUCT OF ALGASB AVALANCHE PHOTODIODES ANALYZED BY USING EQUIVALENT MULTIPLICATION REGION METHOD

被引：5

作者：

ITO, M

MIKAWA, T

WADA, O

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 05期

关键词：

D O I：

10.1109/55.31730

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：230 / 231

页数：2

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[4] TUNNELING CURRENTS IN IN0.53GA0.47AS HOMOJUNCTION DIODES AND DESIGN OF INGAAS-INP HETERO-STRUCTURE AVALANCHE PHOTO-DIODES [J].

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