ETCH RATE ENHANCEMENT OF SILICON IN CF4-O2 PLASMAS

被引：6

作者：

WHITE, LK

MAA, JS

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 11期

关键词：

D O I：

10.1063/1.95755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1050 / 1052

页数：3

共 9 条

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[2]

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[4]

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[5] ACCELERATION OF PLASMA ETCH RATE CAUSED BY ALKALINE RESIDUES [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) :103-106

[6] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J].

MOGAB, CJ ;

ADAMS, AC ;

FLAMM, DL .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3796-3803

[7]

MOGAB CJ, 1977, J ELECTROCHEM SOC, V124, P1262, DOI 10.1149/1.2133542

[8] PLASMA PHOTORESIST STRIPPING IN A PLANAR REACTOR [J].

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[9]

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