LIQUID-PHASE EPITAXIAL REGROWTH ON SULFIDE-PASSIVATED GA1-XALXAS

被引：18

作者：

BERKOVITS, VL ^{[1
]}

LANTRATOV, VM ^{[1
]}

LVOVA, TV ^{[1
]}

SHAKIASHVILI, GA ^{[1
]}

ULIN, VP ^{[1
]}

机构：

[1] ECOLE POLYTECH,PHYS MAT CONDENSEE LAB,F-91128 PALAISEAU,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 07期

关键词：

D O I：

10.1063/1.109861

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that Na2S passivation allows liquid phase epitaxial regrowth of Ga0.5Al0.5As upon Ga1-xAlxAs (0.3 less-than-or-equal-to x less-than-or-equal-to 0.8) air exposure. Large aluminum concentrations require concentrated (2.4 M) sulfide solutions. We have also studied the Ga1-xAlxAs etching rate by Na2S. For large sulfide concentrations or small aluminum concentrations, the etching process stops after some time. These two phenomena are correlated because both of them require the presence on the surface of a stable protective layer. This can be understood by assuming the existence at the surface of two competing mechanisms: etching and passivation.

引用

页码：970 / 972

页数：3

共 9 条

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