MOLECULAR-BEAM EPITAXY REGROWTH BY USE OF AMMONIUM SULFIDE CHEMICAL TREATMENTS

被引：18

作者：

MELLOCH, MR

CARPENTER, MS

DUNGAN, TE

LI, D

OTSUKA, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 11期

关键词：

D O I：

10.1063/1.102566

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The application of ammonium sulfide chemical treatments for molecular beam epitaxy regrowth is examined. Reflection high-energy electron diffraction, transmission electron microscopy, and capacitance-voltage profiling techniques are used to investigate the regrown interface. A slight enhancement of the electron concentration is seen at the regrown interface due to the incorporation of residual sulfur atoms as donors. The amount of residual sulfur donors is a strong function of the substrate temperature at which regrowth is initiated.

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页码：1064 / 1066

页数：3

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