MOLECULAR-BEAM EPITAXY REGROWTH BY USE OF AMMONIUM SULFIDE CHEMICAL TREATMENTS

被引：18

作者：

MELLOCH, MR

CARPENTER, MS

DUNGAN, TE

LI, D

OTSUKA, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 11期

关键词：

D O I：

10.1063/1.102566

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The application of ammonium sulfide chemical treatments for molecular beam epitaxy regrowth is examined. Reflection high-energy electron diffraction, transmission electron microscopy, and capacitance-voltage profiling techniques are used to investigate the regrown interface. A slight enhancement of the electron concentration is seen at the regrown interface due to the incorporation of residual sulfur atoms as donors. The amount of residual sulfur donors is a strong function of the substrate temperature at which regrowth is initiated.

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页码：1064 / 1066

页数：3

相关论文

共 30 条

[11] NUCLEATION AND CHARACTERIZATION OF PSEUDOMORPHIC ZNSE GROWN ON MOLECULAR-BEAM EPITAXIALLY GROWN GAAS EPILAYERS [J].

GUNSHOR, RL ;

KOLODZIEJSKI, LA ;

MELLOCH, MR ;

VAZIRI, M ;

CHOI, C ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1987, 50 (04) :200-202

[12] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY ON (NH4)2SX-TREATED GAAS (100) SURFACES [J].

HIRAYAMA, H ;

MATSUMOTO, Y ;

OIGAWA, H ;

NANNICHI, Y .

APPLIED PHYSICS LETTERS, 1989, 54 (25) :2565-2567

[13] REDUCTION OF A HIGHLY-RESISTIVE LAYER AT AN INTERRUPTED-INTERFACE OF GAAS GROWN BY MBE [J].

IIMURA, Y ;

TAKASUGI, H ;

KAWABE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (01) :95-98

[14] ARSENIC PASSIVATION - A POSSIBLE REMEDY FOR MBE GROWTH-INTERRUPTION PROBLEMS [J].

KAWAI, NJ ;

NAKAGAWA, T ;

KOJIMA, T ;

OHTA, K ;

KAWASHIMA, M .

ELECTRONICS LETTERS, 1984, 20 (01) :47-48

[15] ANTIMONY PASSIVATION OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS-SURFACES [J].

KERR, TM ;

PEACOCK, DC ;

WOOD, CEC .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) :1494-1496

[16]

NEUDECK PG, 1988, TREE883 PURD U TECHN

[17] NEAR-IDEAL TRANSPORT IN AN ALGAAS GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY NA2S.9H2O REGROWTH [J].

NOTTENBURG, RN ;

SANDROFF, CJ ;

HUMPHREY, DA ;

HOLLENBECK, TH ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1988, 52 (03) :218-220

[18]

OIGAWA H, 1988, 20TH C SOL STAT DEV, P263

[19]

PRICE GL, 1982, 2ND INT S MOL BEAM E, P259

[20] ELECTRICAL CHARACTERIZATION OF AN EPITAXIAL ZNSE EPITAXIAL GAAS HETEROINTERFACE [J].

QIAN, QD ;

QIU, J ;

KOBAYASHI, M ;

GUNSHOR, RL ;

MELLOCH, MR ;

COOPER, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :793-798