DYNAMICS OF OPTICALLY SWITCHED BISTABLE DIODE-LASER AMPLIFIERS

被引：38

作者：

SHARFIN, WF

DAGENAIS, M

机构：

[1] GTE Lab Inc, Waltham, MA, USA, GTE Lab Inc, Waltham, MA, USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 03期

关键词：

LASER BEAMS - Amplifiers - MATHEMATICAL TECHNIQUES - Numerical Analysis - OPTICAL DEVICES - Switching - SEMICONDUCTING INDIUM COMPOUNDS;

D O I：

10.1109/JQE.1987.1073337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of the switch-off time of an optically switched Fabry-Perot InGaAsP/InP laser amplifier indicate that the device can turn off in less than the spontaneous carrier lifetime. The switching dynamics of the amplifier are numerically modeled using the van der Pol equation with optical injection and the rate equation for the carrier density. The simulations show that the device switches off faster as its injection current is increased toward the threshold level. A qualitative analytical analysis is presented which shows that this fast switch-off is due to the very large cavity finesse of the amplifier when biased near its lasing threshold.

引用

页码：303 / 308

页数：6

共 18 条

[1] A COMPARISON OF ACTIVE AND PASSIVE OPTICAL BISTABILITY IN SEMICONDUCTORS [J].