SOME PROPERTIES CONCERNING AC IMPEDANCE OF P-I-N AND P-N-N+ DIODES

被引：11

作者：

VARSHNEY, RC ^{[1
]}

ROULSTON, DJ ^{[1
]}

CHAMBERLAIN, SG ^{[1
]}

机构：

[1] UNIV WATERLOO, ELECT ENGN DEPT, WATERLOO, ONTARIO, CANADA

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 07期

关键词：

D O I：

10.1016/0038-1101(74)90093-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：699 / 706

页数：8

共 10 条

[1]

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[2]

ARONOV DA, 1971, PHYSICS PN JUNCTIONS

[3] CALCULATION OF MINORITY CARRIER CURRENT IN DIFFUSED EMITTER REGIONS [J].

CHOO, SC .

SOLID-STATE ELECTRONICS, 1972, 15 (01) :11-+

[4]

Ladany L., 1960, IRE T ELECT DEVICES, VED-7, P303

[5]

LINDMAYER J, 1965, FUNDAMENTALS SEMICON

[6]

PRIMA NA, 1967, SOV PHYS SEMICOND+, V1, P444

[7] SIMPLIFIED COMPUTER-AIDED ANALYSIS OF DOUBLE-DIFFUSED TRANSISTORS INCLUDING 2-DIMENSIONAL HIGH-LEVEL EFFECTS [J].

ROULSTON, DJ ;

SEHGAL, J ;

CHAMBERL.SG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) :809-&

[8] SEMIQUANTITATIVE TREATMENT OF TRANSIENTS IN SILICON EPITAXIAL DIODES [J].

ROULSTON, DJ ;

VARSHNEY, RC .

ELECTRONICS LETTERS, 1969, 5 (22) :548-&

[9] TRANSIENT BEHAVIOUR OF A RANGE OF P+-N-N+ DIODES WITH NARROW CENTRE REGIONS [J].

VARSHNEY, RC ;

ROULSTON, DJ .

SOLID-STATE ELECTRONICS, 1970, 13 (07) :1081-&

[10] RECOMBINATION DEPENDENT CHARACTERISTICS OF SILICON P+-N-N+ EPITAXIAL DIODES [J].

VENKATESWARAN, K ;

ROULSTON, DJ .

SOLID-STATE ELECTRONICS, 1972, 15 (03) :311-+

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