SEMIQUANTITATIVE TREATMENT OF TRANSIENTS IN SILICON EPITAXIAL DIODES

被引：4

作者：

ROULSTON, DJ

VARSHNEY, RC

机构：

[1] Department of Electrical Engineering, University of Waterloo, Waterloo, Ont.

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 22期

关键词：

D O I：

10.1049/el:19690413

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Three different types of p+-n-n+ device are considered, each having an effective centre-layer width much less than a minority-carrier diffusion length. Using simple arguments, the transient behaviour for ‘current switching’ is analysed, and some basic parameters pertinent to modelling of such devices are derived. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：548 / &

共 5 条

[1] REVERSE RECOVERY PROCESSES IN SILICON POWER RECTIFIERS [J].