HG-RICH LIQUID-PHASE EPITAXY OF HG1-XCDXTE

Over the past decade, liquid-phase epitaxy (LPE) has become an established technique for the growth of HgCdTe. This article reviews one of the successful LPE technologies developed for HgCdTe, specifically, ''infinite-melt'' vertical LPE (VLPE) from Hg-rich' solutions. In spite of the relatively low solubility of Cd in Hg-rich solutions and the relatively high Hg vapor pressure at the usual growth temperatures, this approach has been found to offer superior results for growth of HgCdTe suitable for various compositions and layer structures. An historical perspective and the current status of VLPE technology are presented. Particular emphasis is placed on the important role of the thermodynamic parameters (phase diagram), on control of stoichiometry (defect chemistry) and on impurity doping (distribution coefficient) for growth of HgCdTe layers from Hg solutions. Critical material characteristics, such as transport properties, minority-carrier lifetime, morphology and crystal structure, are also discussed.