CHARACTERIZATION OF SI-SIO2 INTERFACE TRAPS IN P-METAL-OXIDE-SEMICONDUCTOR STRUCTURES WITH THIN OXIDES BY CONDUCTANCE TECHNIQUE

被引：81

作者：

HUNG, KK

CHENG, YC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 10期

关键词：

D O I：

10.1063/1.339091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4204 / 4211

页数：8

共 24 条

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