FREQUENCY-ENHANCED FRACTIONAL QUANTIZATION IN GAAS-GAALAS HETEROJUNCTIONS

被引：17

作者：

MCFADDEN, C

LONG, AP

MYRON, HW

PEPPER, M

ANDREWS, D

DAVIES, GJ

机构：

[1] CATHOLIC UNIV NIJMEGEN,DEPT PHYS,NIJMEGEN,NETHERLANDS

[2] GEC HIRST RES CTR,WEMBLEY,MIDDX,ENGLAND

[3] BRITISH TELECOM RES CTR,IPSWICH,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 17期

关键词：

D O I：

10.1088/0022-3719/17/17/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L439 / L444

页数：6

共 7 条

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STILES, PJ .

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[2] FREQUENCY-INDUCED ELECTRON DELOCALIZATION AND FRACTIONAL QUANTIZATION IN SILICON INVERSION-LAYERS [J].

LONG, AP ;

MYRON, HW ;

PEPPER, M .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (17) :L433-L438

[3] THE FREQUENCY EFFECT AND THE QUANTIZED HALL RESISTANCE [J].

PEPPER, M ;

WAKABAYASHI, J .

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[4] 2-TERMINAL CONDUCTANCE OF THE QUANTIZED HALL RESISTOR [J].

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DEAN, CC ;

PEPPER, M .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (13) :L359-L364

[5] FRACTIONAL QUANTIZATION OF THE HALL-EFFECT [J].

STORMER, HL ;

CHANG, A ;

TSUI, DC ;

HWANG, JCM ;

GOSSARD, AC ;

WIEGMANN, W .

PHYSICAL REVIEW LETTERS, 1983, 50 (24) :1953-1956

[6]

TSUI DC, 1982, PHYS REV LETT, V48, P1159

[7] ELECTRON LOCALIZATION AND THE QUANTIZED HALL RESISTANCE IN SILICON INVERSION-LAYERS [J].

WAKABAYASHI, J ;

MYRON, HW ;

PEPPER, M .

PHYSICA B & C, 1983, 117 (MAR) :691-693

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