ELECTRON-MOBILITY WITHIN 100 NM OF THE SI/SAPPHIRE INTERFACE IN DOUBLE-SOLID-PHASE EPITAXIALLY REGROWN SOS

被引：7

作者：

GARCIA, GA

REEDY, RE

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 10期

关键词：

D O I：

10.1049/el:19860366

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：537 / 538

页数：2

相关论文

共 6 条

[1]

HSU ST, 1975, RCA REV, V36, P240

[2] ELECTRON-MOBILITY IN SOS FILMS [J].

HSU, ST .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :913-916

[3] IMPROVEMENT OF CRYSTALLINE QUALITY OF EPITAXIAL SI LAYERS BY ION-IMPLANTATION TECHNIQUES [J].

LAU, SS ;

MATTESON, S ;

MAYER, JW ;

REVESZ, P ;

GYULAI, J ;

ROTH, J ;

SIGMON, TW ;

CASS, T .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :76-78

[4] LATTICE IMAGES OF DEFECT-FREE SILICON ON SAPPHIRE PREPARED BY ION-IMPLANTATION [J].

PARKER, MA ;

SINCLAIR, R ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :626-628

[5] SUPPRESSING AL OUTDIFFUSION IN IMPLANTATION AMORPHIZED AND RECRYSTALLIZED SILICON ON SAPPHIRE FILMS [J].

REEDY, RE ;

SIGMON, TW ;

CHRISTEL, LA .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :707-709

[6] IMPROVEMENT OF SOS DEVICE PERFORMANCE BY SOLID-PHASE EPITAXY [J].

YOSHII, T ;

TAGUCHI, S ;

INOUE, T ;

TANGO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :175-179