IMPROVEMENT OF SOS DEVICE PERFORMANCE BY SOLID-PHASE EPITAXY

被引：24

作者：

YOSHII, T

TAGUCHI, S

INOUE, T

TANGO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1982年 / 21卷 / 01期

关键词：

D O I：

10.7567/JJAPS.21S1.175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：175 / 179

页数：5

共 10 条

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[2] IMPROVEMENT OF CRYSTALLINE QUALITY OF EPITAXIAL SILICON-ON-SAPPHIRE BY ION-IMPLANTATION AND FURNACE REGROWTH [J].

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[3] HIGH ELECTRON-MOBILITY SILICON FILMS GROWN ON SAPPHIRE AT HIGH GROWTH-RATE [J].

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[4] CRYSTALLINE DISORDER REDUCTION AND DEFECT-TYPE CHANGE IN SILICON ON SAPPHIRE FILMS BY SILICON IMPLANTATION AND SUBSEQUENT THERMAL ANNEALING [J].

INOUE, T ;

YOSHII, T .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :64-66

[5] CRYSTALLINE QUALITY IMPROVEMENT OF SOS FILMS BY SI IMPLANTATION AND SUBSEQUENT ANNEALING [J].

INOUE, T ;

YOSHII, T .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :683-690

[6] IMPROVEMENT OF CRYSTALLINE QUALITY OF EPITAXIAL SI LAYERS BY ION-IMPLANTATION TECHNIQUES [J].

LAU, SS ;

MATTESON, S ;

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REVESZ, P ;

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CASS, T .

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[7]

MACGREIVY DJ, 1977, IEEE T ELECTRON DEVI, V24, P730

[8] ELECTRICAL-PROPERTIES OF SILICON-IMPLANTED FURNACE-ANNEALED SILICON-ON-SAPPHIRE DEVICES [J].

ROULET, ME ;

SCHWOB, P ;

GOLECKI, I ;

NICOLET, MA .

ELECTRONICS LETTERS, 1979, 15 (17) :527-529

[9] GETTERING EFFECT BY OXYGEN IMPLANTATION IN SOS [J].

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ITOH, T .

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[10]

YOSHII T, 1981, ELECTRONIC MATERIALS, P50

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