GETTERING EFFECT BY OXYGEN IMPLANTATION IN SOS

被引：10

作者：

YAMAMOTO, Y ^{[1
]}

WILSON, IH ^{[1
]}

ITOH, T ^{[1
]}

机构：

[1] WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 06期

关键词：

D O I：

10.1063/1.90813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Rutherford backscattering and Hall measurements for oxygen- and/or boron-implanted SOS samples have revealed that the oxygen implantation into the sapphire substrate through the silicon layer improves the crystalline quality in the surface region after annealing and is effective in suppressing the anomalous increase of the carrier concentration due to the aluminum diffusion from the substrate during annealing.

引用

页码：403 / 405

页数：3

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