FUNDAMENTAL LINEWIDTH IN SOLITARY, ULTRANARROW OUTPUT PBS1-XSEX DIODE-LASERS

被引：18

作者：

FREED, C ^{[1
]}

BIELINSKI, JW ^{[1
]}

LO, W ^{[1
]}

机构：

[1] GM CORP, RES LABS, DEPT PHYS, WARREN, MI 48090 USA

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 07期

关键词：

D O I：

10.1063/1.94467

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：629 / 631

页数：3

共 16 条

[1] IMPROVED LASER FREQUENCIES AND DUNHAM COEFFICIENTS FOR ISOTOPICALLY SUBSTITUTED CARBON-MONOXIDE
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[2] SPECTRAL CHARACTERISTICS OF EXTERNAL-CAVITY CONTROLLED SEMICONDUCTOR-LASERS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (01) : 44 - 59
[3] LAMB DIP IN CO LASERS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 219 - 226
[4] SPECTRAL DEPENDENCE OF THE CHANGE IN REFRACTIVE-INDEX DUE TO CARRIER INJECTION IN GAAS-LASERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4457 - 4461
[5] THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) : 259 - 264
[6] DIRECT OBSERVATION OF LORENTZIAN LINE SHAPE AS LIMITED BY QUANTUM PHASE NOISE IN A LASER ABOVE THRESHOLD
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[J]. PHYSICAL REVIEW LETTERS, 1969, 23 (06) : 277 - +
[7] NEAR-FIELD EMISSION OF LEAD-SULFIDE-SELENIDE HOMOJUNCTION LASERS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (07) : 740 - 743
[8] WAVELENGTH VARIATION OF 1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP INP LASERS DUE TO DIRECT MODULATION
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AOKI, S
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (03) : 343 - 351
[9] DIFFUSED HOMOJUNCTION LEAD-SULFIDE-SELENIDE DIODES WITH 140 K-LASER OPERATION
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SWETS, DE
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 938 - 940
[10] INFRARED AND OPTICAL MASERS
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TOWNES, CH
[J]. PHYSICAL REVIEW, 1958, 112 (06): : 1940 - 1949

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