ADVANCES IN UNDERSTANDING METAL-SEMICONDUCTOR INTERFACES BY SURFACE SCIENCE TECHNIQUES

[31] BOLTAKS BI, 1979, SOV PHYS SEMICOND+, V13, P23

[32] CHARACTERIZATION OF SILICON METALLIZATION SYSTEMS USING ENERGETIC ION BACKSCATTERING [J]. PROCEEDINGS OF THE IEEE, 1974, 62 (09) : 1224 - 1231

[33] Brebrick R.F., 1975, TREATISE SOLID STATE, V2, P333

[34] Brillson L. J., 1980, Journal of the Physical Society of Japan, V49, P1089

[35] CHEMICAL AND ELECTRONIC-STRUCTURE OF COMPOUND SEMICONDUCTOR-METAL INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 652 - 658

[36] INTERACTION OF METALS WITH SEMICONDUCTOR SURFACES [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 249 - 267

[37] MEASUREMENT AND MODULATION OF ATOMIC INTER-DIFFUSION AT AU-AL-GAAS(110) INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 880 - 885

[38] ATOMIC MODULATION OF INTER-DIFFUSION AT AU-GAAS INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (10) : 667 - 670

[39] COUPLED INTERFACE PLASMONS OF AL FILMS ON CDSE AND CDS [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (05) : 245 - 248

[40] CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 784 - 786

[31] BOLTAKS BI, 1979, SOV PHYS SEMICOND+, V13, P23

[32] CHARACTERIZATION OF SILICON METALLIZATION SYSTEMS USING ENERGETIC ION BACKSCATTERING [J]. PROCEEDINGS OF THE IEEE, 1974, 62 (09) : 1224 - 1231

[33] Brebrick R.F., 1975, TREATISE SOLID STATE, V2, P333

[34] Brillson L. J., 1980, Journal of the Physical Society of Japan, V49, P1089

[35] CHEMICAL AND ELECTRONIC-STRUCTURE OF COMPOUND SEMICONDUCTOR-METAL INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 652 - 658

[36] INTERACTION OF METALS WITH SEMICONDUCTOR SURFACES [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 249 - 267

[37] MEASUREMENT AND MODULATION OF ATOMIC INTER-DIFFUSION AT AU-AL-GAAS(110) INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 880 - 885

[38] ATOMIC MODULATION OF INTER-DIFFUSION AT AU-GAAS INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (10) : 667 - 670

[39] COUPLED INTERFACE PLASMONS OF AL FILMS ON CDSE AND CDS [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (05) : 245 - 248

[40] CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 784 - 786