FORMATION OF ALUMINUM NITRIDE BY NITROGEN-ION IMPLANTATION IN ALUMINUM SINGLE-CRYSTAL

被引:5
作者
KIMURA, K
ONITSUKA, Y
NAKANISHI, K
MANNAMI, M
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 08期
关键词
D O I
10.1143/JJAP.23.1145
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1145 / 1145
页数:1
相关论文
共 3 条
[1]   CHARACTERIZATION OF ALUMINUM NITRIDE LAYERS FORMED DIRECTLY BY 700-800 KEV N2+(N-15) IMPLANTATION INTO ALUMINUM [J].
KIDO, Y ;
KAKENO, M ;
YAMADA, K ;
HIOKI, T ;
KAWAMOTO, J ;
TADA, M .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (10) :2067-2077
[2]   FORMATION OF AL-NITRIDE FILMS AT ROOM-TEMPERATURE BY NITROGEN ION-IMPLANTATION INTO ALUMINUM [J].
LIESKE, N ;
HEZEL, R .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5806-5810
[3]   EPITAXIAL-GROWTH OF ALUMINUM NITRIDE ON SAPPHIRE USING METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
MORITA, M ;
UESUGI, N ;
ISOGAI, S ;
TSUBOUCHI, K ;
MIKOSHIBA, N .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :17-23