CHARACTERIZATION OF ALUMINUM NITRIDE LAYERS FORMED DIRECTLY BY 700-800 KEV N2+(N-15) IMPLANTATION INTO ALUMINUM

被引：25

作者：

KIDO, Y

KAKENO, M

YAMADA, K

HIOKI, T

KAWAMOTO, J

TADA, M

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1982年 / 15卷 / 10期

关键词：

D O I：

10.1088/0022-3727/15/10/025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2067 / 2077

页数：11

共 11 条

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