ALXGA1-XAS-GAAS VERTICAL-CAVITY SURFACE-EMITTING LASER GROWN ON SI SUBSTRATE

被引：35

作者：

DEPPE, DG

CHAND, N

VANDERZIEL, JP

ZYDZIK, GJ

机构：

[1] AT and T Bell Laboratories, Murray Hill, NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 08期

关键词：

D O I：

10.1063/1.102698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented demonstrating room-temperature operation of Al xGa1-xAs-GaAs vertical-cavity surface-emitting lasers grown on Si substrates. The device structures are grown using molecular beam epitaxy and a grown-in quarter-wave AlAs-GaAs stack is used as the n-side reflector and a nonalloyed Ag dot used as the p-side reflector/contact. Pulsed threshold currents of ∼125 mA are obtained for a 15-μm-diam device.

引用

页码：740 / 742

页数：3

共 27 条

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