OBLIQUELY DEPOSITED AMORPHOUS-GE FILMS .2. ELECTRICAL-PROPERTIES

被引：8

作者：

CHOPRA, KL ^{[1
]}

PANDYA, DK ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT PHYS,NEW DELHI 11029,INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 36卷 / 01期

关键词：

D O I：

10.1002/pssa.2210360109

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：89 / 100

页数：12

共 23 条

[1]

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[3] EFFECT OF IMPURITIES ON THERMOELECTRIC-POWER OF AMORPHOUS-GERMANIUM [J].

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NATH, P ;

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SOLID STATE COMMUNICATIONS, 1975, 16 (06) :723-727

[4]

BARTHWAL SK, 1976, PHYS STAT SOL, V36

[5] AMORPHOUS-GE ALLOY-FILMS .2. TRANSPORT PROPERTIES [J].

CHOPRA, KL ;

NATH, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 33 (01) :333-344

[6] STRUCTURAL, ELECTRICAL, AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM FILMS [J].

CHOPRA, KL ;

BAHL, SK .

PHYSICAL REVIEW B, 1970, 1 (06) :2545-&

[7]

JONES DH, TO BE PUBLISHED

[8]

KNOTEK ML, 1973, PHYS REV LETT, V30, P652, DOI 10.1103/PhysRevLett.30.652

[9] PHYSICAL PROPERTIES OF SPUTTERED AMORPHOUS GE - ROLE OF DEPOSITION RATE [J].

KOC, S ;

ZAVETOVA, M ;

ZEMEK, J ;

RENNER, O .

CZECHOSLOVAK JOURNAL OF PHYSICS SECTION B, 1972, B 22 (12) :1296-&

[10]

Mott N. F., 1968, Journal of Non-Crystalline Solids, V1, P1, DOI 10.1016/0022-3093(68)90002-1

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