THE ROLE OF CHLORINE IN THE GETTERING OF METALLIC IMPURITIES FROM SILICON

被引:3
作者
BAGINSKI, TA [1 ]
MONKOWSKI, JR [1 ]
机构
[1] RADIO SEMICOND INC,STATE COLL,PA 16801
关键词
D O I
10.1149/1.2114277
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2031 / 2033
页数:3
相关论文
共 5 条
[1]   DEPENDENCE OF MINORITY-CARRIER BULK GENERATION IN SILICON MOS STRUCTURES ON HCL CONCENTRATION IN AN OXIDIZING AMBIENT [J].
ESQUEDA, PD ;
DAS, MB .
SOLID-STATE ELECTRONICS, 1980, 23 (07) :741-746
[2]   DIFFUSION OF GOLD IN THIN SILICON SLICES [J].
HUNTLEY, FA ;
WILLOUGHBY, AF .
SOLID-STATE ELECTRONICS, 1970, 13 (09) :1231-+
[3]  
MILNES AG, 1973, DEEP IMPURITIES SEMI, P28
[4]   MINORITY-CARRIER GENERATION STUDIES IN MOS CAPACITORS ON N-TYPE SILICON [J].
YOUNG, DR ;
OSBURN, CM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1578-1581
[5]  
1984, JANAF THERMOCHEMICAL, P37