MINORITY-CARRIER GENERATION STUDIES IN MOS CAPACITORS ON N-TYPE SILICON

被引：41

作者：

YOUNG, DR ^{[1
]}

OSBURN, CM ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, Yorktown Hts, NY 10598 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 11期

关键词：

D O I：

10.1149/1.2403307

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1578 / 1581

页数：4

共 26 条

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[5]

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[8]

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[9] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

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[10] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :781-+

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