STUDY OF DISLOCATIONS IN HIGHLY IN DOPED GAAS CRYSTALS GROWN BY LIQUID ENCAPSULATION CZOCHRALSKI TECHNIQUE

被引：16

作者：

PICHAUD, B ^{[1
]}

BURLEDURBEC, N ^{[1
]}

MINARI, F ^{[1
]}

DUSEAUX, M ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 71卷 / 03期

关键词：

D O I：

10.1016/0022-0248(85)90373-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：648 / 654

页数：7

共 18 条

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[4]

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[7] FORMATION OF DISLOCATIONS DURING LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS SINGLE-CRYSTALS [J].

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APPLIED PHYSICS LETTERS, 1982, 40 (09) :790-793

[8] ELIMINATION OF DISLOCATIONS IN GAAS SINGLE-CRYSTALS [J].

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[10] DISLOCATIONS IN GAAS [J].

JACOB, G ;

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JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) :245-258

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