SOME NEW POSSIBILITIES IN NONDESTRUCTIVE DEPTH PROFILING USING SECONDARY-EMISSION SPECTROSCOPY - REELS AND EPES

被引：12

作者：

GERGELY, G

MENYHARD, M

SULYOK, A

机构：

来源：

VACUUM | 1986年 / 36卷 / 7-9期

关键词：

D O I：

10.1016/0042-207X(86)90230-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：471 / 475

页数：5

共 27 条

[1] SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].

ASPNES, DE ;

THEETEN, JB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1359-1365

[2] SPECTRAL ELLIPSOMETRIC TEM AND ELECTRON SPECTROSCOPIC INVESTIGATIONS ON OXIDIZED ALUMINUM THIN-FILMS [J].

BARNA, PB ;

BODO, Z ;

GERGELY, G ;

ADAM, J .

VACUUM, 1986, 36 (7-9) :465-469

[3] CALCULATED AND MEASURED INFRARED REFLECTIVITY OF DIFFUSED IMPLANTED P-TYPE SILICON LAYERS [J].

BARTA, E ;

LUX, G .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1983, 16 (08) :1543-1553

[4]

BRONSHTEIN IM, 1975, FTT, V17, P243

[5] OXIDE THICKNESS MEASUREMENTS UP TO 120 A ON SILICON AND ALUMINUM USING CHEMICALLY SHIFTED AUGER-SPECTRA [J].

CHANG, CC ;

BOULIN, DM .

SURFACE SCIENCE, 1977, 69 (02) :385-402

[6]

CONE MI, 1983, J APPL PHYS, P6346

[7]

Croce P., 1981, Acta Electronica, V24, P247

[8] ELASTIC PEAK ELECTRON-SPECTROSCOPY FOR AUGER-ELECTRON SPECTROSCOPY AND ELECTRON-ENERGY LOSS SPECTROSCOPY [J].

GERGELY, G .

SURFACE AND INTERFACE ANALYSIS, 1981, 3 (05) :201-205

[9] THE ELASTIC PEAK IN AES AND EELS [J].

GERGELY, G .

VACUUM, 1983, 33 (1-2) :89-91

[10]

GERGELY G, 1984, ACTA U WRATISLAV, V45, P27

← 1 2 3 →